 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1440 Unit: mm s Features q q 4.50.1 1.60.2 1.50.1 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.60.1 0.4max. 45 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 50 50 5 4 3 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3 3.00.15 2 1 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg * marking 1 150 -55 ~ +150 EIAJ:SC-62 Mini Power Type Package Marking symbol : 1H Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 200mA VCE = 2V, IC = 1.0A IC = 1A, IB = 50mA IC = 1A, IB = 50mA VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHZ min typ max 0.1 Unit A V V V 50 50 5 120 80 0.15 0.82 110 23 *2 340 0.3 1.2 MHz 35 pF Pulse measurement *1h FE1 Rank classification Rank hFE1 R 120 ~ 240 1HR S 170 ~ 340 1HS Marking Symbol 2.50.1 +0.25 V V 1 Transistor PC -- Ta 1.2 120 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 100 2SD2185 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=50 Collector power dissipation PC (W) 1.0 Collector current IC (mA) IB=400A 80 350A 300A 60 250A 200A 40 150A 20 100A 50A 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=50 300 VCE=2V 240 fT -- I E VCB=10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 250 Ta=75C 200 25C 150 -25C 100 Transition frequency fT (MHz) 1 3 10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 100C Forward current transfer ratio hFE 200 160 25C 120 80 50 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 0 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 60 Collector output capacitance Cob (pF) 50 IE=0 f=1MHz Ta=25C 40 30 20 10 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
Price & Availability of 2SD2185
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |